Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Giannazzo, F ^a   Roccaforte, F ^a   Raineri, V ^a  

^a CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CAPACITANCE; DEPTH PROFILING; SCANNING ELECTRON MICROSCOPY; TEMPERATURE MEASUREMENT;

MEDIUM DOSE; MOBILITY PROFILES; NANOMETRIC RESOLUTION; SCANNING CAPACITANCE MICROSCOPY; SCANNING SPREADING RESISTANCE MICROSCOPY;

SILICON CARBIDE;

EID: 36248938211     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2813022     Document Type: Article

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