Silicon carbide pinch rectifiers using a dual-metal Ti-Ni2Si Schottky barrier

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1741-1747

  Roccaforte, Fabrizio ^a   La Via, Francesco ^a   La Magna, Antonino ^a   Di Franco, Salvatore ^a   Raineri, Vito ^a  

^a CNR   (Italy)

Author keywords

Dual metal pinch rectifiers; SiC Schottky diodes

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NICKEL COMPOUNDS; SILICON CARBIDE; TITANIUM;

POWER DISSIPATION;

SCHOTTKY BARRIER DIODES;

EID: 0042527464     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815127     Document Type: Article

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