Silicon carbide high-power devices

IEEE Transactions on Electron Devices

Volumn 43, Issue 10, 1996, Pages 1732-1741

  Weitzel, Charles E ^a,b   Palmour, John W ^c   Carter Jr , Calvin H ^a   Moore, Karen ^c   Nordquist, Kevin J ^a   Alien, Scott ^a   Thero, Christine ^a   Bhatnagar, Mohit ^c  

^a IEEE

^b MOTOROLA INC   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; INTEGRATED CIRCUIT LAYOUT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

ELECTRON DRIFT VELOCITY; HIGH POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030270183     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.536819     Document Type: Article

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