Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Slotte, J ^a   Saarinen, K ^a   Janson, M S ^b,e   Hallen A ^b   Kuznetsov, A Yu ^c   Svensson, B G ^c   Wong Leung, J ^d   Jagadish, C ^d  

^a AALTO UNIVERSITY   (Finland)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMPLANTATION TEMPERATURE; ION CHANNELLING; SUBLATTICES; VACANCY CLUSTERS;

ANNEALING; CRYSTAL LATTICES; FUNCTIONS; HEAT TREATMENT; MATHEMATICAL MODELS; NEUTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE TREATMENT;

ION IMPLANTATION;

EID: 13744258288     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844618     Document Type: Article

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