Hafnium interdiffusion studies from hafnium silicate into silicon

Applied Physics Letters

Volumn 79, Issue 25, 2001, Pages 4192-4194

  Quevedo Lopez, M ^a   El Bouanani, M ^a   Addepalli, S ^a   Duggan, J L ^a   Gnade, B E ^a   Wallace, R M ^a   Visokay, M R ^b   Douglas, M ^b   Colombo, L ^b  

^a Center for Advanced Research and Technology   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035905251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425466     Document Type: Article

References (26)

1. Semiconductor Industry Association Roadmap (Semiconductor Industry, Association San Jose, CA, 1999, 2000 update); http://public.itrs.net.
2. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 76, 112 (2000).
3. W. J. Qi, R. Nieh, E. Dharmarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee, Appl. Phys. Lett. 77, 1704 (2000).
4. A. Chin, Y. H. Wu, S. B. Chen, C. C. Liao, and W. J. Chen, VLSI Symposium Technical Digest, 2000, p. 16.
5. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Borjarczuk, and M. A. Coppel, Appl. Phys. Lett. 77, 2710 (2000).
6. J. J. Chambers and G. N. Parsons, Appl. Phys. Lett. 77, 2385 (2000).
7. B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 133 (1999).
8. W. J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 145 (1999).
9. For a review, see, for example, G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
10. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
11. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
12. H. Bracht, MRS Bull. 25, 22 (2000).
13. B. W. Busch, W. H. Schulte, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh, and J. Lee, Phys. Rev. B 62, R13290 (2000).
14. W. Hoffmeisneter and M. Zugel, Int. J. Appl. Radiat. Isot. 20, 139 (1969).
15. G. Willeke and K. Kellermann, Semicond. Sci. Technol. 11, 415 (1996).
16. For comparison, the etch rate of silicon oxide is reported to be >600 nm/min; see, for example, W. R. Runyan and K. E. Bean, Semiconductor Integrated Circuit Processing Technology (Addison-Wesley, New York, 1994), p. 265.
17. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, and R. M. Wallace (unpublished).
18. A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
19. S. Zaima, N. Waka, T. Yamaguchi, and Y. Yasuda, J. Appl. Phys. 74, 6703 (1993).
20. J. Y. Chang and L. J. Chen, J. Appl. Phys. 68, 4002 (1990).
21. See, for example, CRC Handbook of Chemistry and Physics, 68th ed. (Chemical Rubber, Cleveland, OH, 1987-1988).
22. 2 with 0.5 nm analysis depth in ToF-SIMS.
23. 2 over a much larger (∼μm) sampling depth.
24. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1996), see also the program SRIM at: http://www.srim.org
25. M. Quevedo-Lopez, M. El Bouanani, S. Acklepalli, J. E. Duggan, B. E. Guade, M. R. Visokey, M. Douglas, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 79, 2958 (2001).
26. S. M. Sze, Physics of Semiconductors Devices (Wiley, New York, 1981), p. 29.