Structure and energetics of the Si- SiO2 interface

Physical Review Letters

Volumn 84, Issue 19, 2000, Pages 4393-4396

  Tu, Yuhai ^a   Tersoff, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001706688     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.4393     Document Type: Article

References (17)

1. L. C. Feldman, E. P. Gusev and E. Garfunkel, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, E. Garfunkel, E. Gusev, and A. Vul' (Kluwer Academic Publishers, Boston, 1998), pp. 1–24, and references therein.
2. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff and G. Hollinger, Phys. Rev. B, 38, 6084 (1988).
3. P. J. Grunthaner, M. H. Hecht and N. M. Johnson, J. Appl. Phys., 61, 629 (1987).
4. S. T. Pantelides and M. Long, The Physics of and its Interfaces (Pergamon, New York, 1978).
5. D. A. Luh, T. Miller and T. C. Chiang, Phys. Rev. Lett., 79, 3014 (1997).
6. A. Ourmazd, D. W. Taylor, J. A. Rentschler and J. Bevk, Phys. Rev. Lett., 59, 213 (1987).
7. A. Pasquarello, M. S. Hybertsen and R. Car, Appl. Phys. Lett., 68, 625 (1996).
8. R. Buczko, S. J. Pennycook and S. T. Pantelides, Phys. Rev. Lett., 84, 943 (2000).
9. I. Ohdomari, H. Akatsu, Y. Yamakoshi and K. Kishimoto, J. Non-Cryst. Solids, 89, 239 (1987).
10. A. Pasquarello, M. S. Hybertsen and R. Car, Nature (London), 396, 58 (1998).
11. K. O. Ng and D. Vanderbilt, Phys. Rev. B, 59, 10 132 (1999).
12. Y. Tu, J. Tersoff, G. Grinstein and D. Vanderbilt, Phys. Rev. Lett., 81, 4899 (1998).
13. D. R. Hamann, (unpublished), (private communication).
14. F. Wooten, K. Winer and D. Weaire, Phys. Rev. Lett., 54, 1392 (1985).
15. R. B. Laughlin and J. D. Joannopoulos, Phys. Rev. B, 17, 2790 (1978).
16. G. Renaud., et al, Appl. Phys. Lett., 58, 1044 (1991).
17. M. M. Banaszak Holl, S. Lee and F. R. McFeely, Appl. Phys. Lett., 65, 1097 (1994).