Semipolar GaN grown on foreign substrates: A review

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Scholz, F ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; FOREIGN SUBSTRATES; GAN GROWTH; NITRIDE STRUCTURES; SEMIPOLAR; SEMIPOLAR STRUCTURE; STACKING FAULT DENSITY;

GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 84856091912     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024002     Document Type: Review

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