Reduction of stacking faults in (112̄0) and (112̄2) GaN films by ELO techniques and benefit on GaN wells emission

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 282-289

  Bougrioua, Z ^a   Laugt M ^a   Vennegues P ^a   Cestier, I ^a   Guhne T ^a   Frayssinet, E ^b   Gibart, P ^a   Leroux, M ^a  

^a CRHEA CNRS   (France)

^b LUMILOG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE EMISSION; LATTICE DEFORMATION; PHOTOLUMINESCENCE SPECTRA; WELLS EMISSION;

COALESCENCE; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; LIGHT EMISSION; OPTICAL PROPERTIES; REDUCTION; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS;

THIN FILMS;

EID: 33846449468     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673585     Document Type: Conference Paper

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