Efficient radiative recombination from «112̄2» -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3122-3124

  Nishizuka, K ^a   Funato, M ^a   Kawakami, Y ^a   Fujita, Sg ^a   Narukawa, Y ^b   Mukai, T ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON BEAMS; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH KINETICS; PHOTOLUMINESCENCE; PIEZOELECTRICITY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CONFOCAL MICROSCOPE; PIEZOELECTRIC FIELDS; RADIATIVE RECOMBINATION LIFETIME; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 8644267611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806266     Document Type: Article

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