Influence of slight misorientations of r-plane sapphire substrates on the growth of nonpolar a-plane GaN layers via HVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2069-2072

  Schwaiger, Stephan ^a   Lipski, Frank ^a   Wunderer, Thomas ^a   Scholz, Ferdinand ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

GaN; Growth; Nucleation; Structure; VPE

Indexed keywords

A-PLANE GAN; ALN NUCLEATION LAYERS; CRYSTAL QUALITIES; CRYSTALLINE QUALITY; FULL WIDTHS AT HALF MAXIMUMS; GAN; GAN LAYERS; GROWTH; HOMOGENEOUS LAYERS; HYDRIDE VAPOR PHASE EPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY; MISCUT ANGLE; MISORIENTATIONS; MISORIENTED SUBSTRATES; NON-POLAR; NON-POLAR GAN; OPTICAL PHASE; PLANE SAPPHIRE; SEM; STRUCTURE; SURFACE QUALITIES; SYSTEMATIC STUDY; TILT ANGLE; VPE; X RAY ROCKING CURVE;

GALLIUM NITRIDE; NUCLEATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE DEFECTS; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 77955780524     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983514     Document Type: Conference Paper

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