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Volumn 94, Issue 16, 2009, Pages

Defect reduction in (11 2- 2) semipolar GaN grown on m -plane sapphire using ScN interlayers

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; DEFECT REDUCTIONS; DISLOCATION DENSITIES; EX-SITU; INTERLAYER THICKNESS; MASK PATTERNING; METAL-ORGANIC VAPOR-PHASE EPITAXIES; PLANE SAPPHIRES; SEED LAYERS; SEMIPOLAR;

EID: 65449116057     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3119321     Document Type: Article
Times cited : (56)

References (23)
  • 14
    • 36049015806 scopus 로고    scopus 로고
    • 0921-4526,. 10.1016/j.physb.2007.08.174
    • J. Hollander, M. J. Kappers, and C. J. Humphreys, Physica B 0921-4526 401-402, 307 (2007). 10.1016/j.physb.2007.08.174
    • (2007) Physica B , vol.401-402 , pp. 307
    • Hollander, J.1    Kappers, M.J.2    Humphreys, C.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.