SCOPUS 정보 검색 플랫폼

Physica Status Solidi (B) Basic Research

Volumn 248, Issue 3, 2011, Pages 549-560

Three-dimensional GaN for semipolar light emitters

(21) Wunderer, T a Feneberg, M a,b Lipski, F a Wang, J a Leute, R A R a Schwaiger, S a Thonke, K a Chuvilin, A a Kaiser, U a Metzner, S b Bertram, F b Christen, J b Beirne, G J c Jetter, M c Michler, P c Schade, L d,e Vierheilig, C d Schwarz, U T d,e Drager A D f Hangleiter, A f Scholz, F a more..

a UNIVERSITY OF ULM (Germany)

b OTTO VON GUERICKE UNIVERSITY (Germany)

c UNIVERSITY OF STUTTGART (Germany)

d UNIVERSITY OF REGENSBURG (Germany)

e FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

f TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

Author keywords

III V semiconductors; InGaN; Light emitting devices; Quantum wells

Indexed keywords

EID: 79951752948 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.201046352 Document Type: Article

Times cited : (62)

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