Semipolar GaN grown on m-plane sapphire using MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1815-1817

  Wernicke, Tim ^a   Netzel, Carsten ^a   Weyers, Markus ^a   Kneissl, Michael ^a,b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; C-AXIS ORIENTATIONS; DONOR-ACCEPTOR PAIR EMISSION; GAN FILM; GROWTH CONDITIONS; LOWER ENERGIES; M-PLANE; MOVPE; MOVPE GROWTH; NEAR BAND EDGE EMISSIONS; ORIENTATION RELATIONSHIP; PL SPECTRA; PRISMATIC PLANES; RMS ROUGHNESS; SEMIPOLAR; XRD;

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR GROWTH; STACKING FAULTS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 71949119773     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778670     Document Type: Conference Paper

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