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Volumn 6, Issue SUPPL. 2, 2009, Pages

Off-angle dependence of void formation and defect behavior in a -plane MOVPE-GaN on r -plane sapphire substrate

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ATOMIC STEP; CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIPS; GAN THIN FILMS; METALORGANIC VAPOR PHASE EPITAXY; MOVPE; NUCLEATION SITES; OFF-ANGLE; PLANE SAPPHIRE; SAPPHIRE SUBSTRATES; SIDE WALLS; SUBSTRATE PLANES; TEM OBSERVATIONS; TRANSMISSION ELECTRON MICROSCOPE; VOID FORMATION;

EID: 79251639134     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880884     Document Type: Article
Times cited : (4)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.