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Volumn 6, Issue SUPPL. 2, 2009, Pages
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Off-angle dependence of void formation and defect behavior in a -plane MOVPE-GaN on r -plane sapphire substrate
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Author keywords
[No Author keywords available]
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Indexed keywords
A-PLANE;
ATOMIC STEP;
CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIPS;
GAN THIN FILMS;
METALORGANIC VAPOR PHASE EPITAXY;
MOVPE;
NUCLEATION SITES;
OFF-ANGLE;
PLANE SAPPHIRE;
SAPPHIRE SUBSTRATES;
SIDE WALLS;
SUBSTRATE PLANES;
TEM OBSERVATIONS;
TRANSMISSION ELECTRON MICROSCOPE;
VOID FORMATION;
DEFECTS;
GALLIUM NITRIDE;
GRAIN BOUNDARIES;
METALLORGANIC VAPOR PHASE EPITAXY;
NUCLEATION;
SAPPHIRE;
SUBSTRATES;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
GALLIUM ALLOYS;
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EID: 79251639134
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200880884 Document Type: Article |
Times cited : (4)
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References (8)
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