Additive color mixture of emission from InGaNGaN quantum wells on structure-controlled GaN microfacets

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Ueda, M ^a   Kondou, T ^a   Hayashi, K ^a   Funato, M ^a   Kawakami, Y ^a   Narukawa, Y ^b   Mukai, T ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; LIGHT EMISSION; MASKS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

COLOR MIXTURE; MASK GEOMETRY CONTROLS; MASK STRIPES; MICROFACET STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248529894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2731526     Document Type: Article

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