Bulk GaN crystals grown by HVPE

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3011-3014

  Fujito, Kenji ^a   Kubo, Shuichi ^a   Nagaoka, Hirobumi ^a   Mochizuki, Tae ^a   Namita, Hideo ^a   Nagao, Satoru ^a  

^a MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

A2. Growth from vapor; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A2. GROWTH FROM VAPOR; A2. SINGLE-CRYSTAL GROWTH; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

CHROMIUM; CORUNDUM; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SULFUR COMPOUNDS; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 65749093841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.046     Document Type: Article

References (15)

1. Nakamura S., Mukai T., and Senoh M. Jpn. J. Appl. Phys. 32 (1993) L16
2. Nishida T., and Kobayashi N. Phys. Status Soldi (a) 188 (2001) 113
3. Nakamura S., Fasol G., and Pearton S.J. The Blue Laser Diode (2000), Springer, New York
4. Eastman L.F., and Mishra U.K. IEEE Spectrum 39 (2002) 28
5. Porowski S. MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G1.3
6. Inoue T., Seki Y., Oda O., Kurai S., Yamada Y., and Taguchi T. Phys. Status Solidi (b) 223 (2001) 15
7. Yamane H., Shimada M., Sekiguchi T., and DiSalvo F.J. J. Cryst. Growth 186 (1998) 8
8. Kawamura F., Morishita M., Omae K., Yoshimura M., Mori Y., and Sasaki T. Jpn. J. Appl. Phys. 42 (2003) L879
9. Dwiliński R., Doradziński R., Garczyński J., Sierzputowski L., Baranowski J.M., and Kamińska M. Diamond Relat. Mater. 7 (1998) 1348
10. Hashimoto T., Wu F., Speck J.S., and Nakamura S. Jpn. J. Appl. Phys. 46 (2007) L889
11. Fujito K., Kiyomi K., Mochizuki T., Oota H., Namita H., Nagao S., and Fujimura I. Phys. Status Solidi (a) 205 (2008) 1056
12. Williams A.D., and Moustakas T.D. J. Cryst. Growth 300 (2007) 37
13. Weyers M., Richter E., Hennig C., Hagedorn S., Wernicke T., and Tränkle G. Proc. SPIE 6910 (2008) 69100I
14. Hiramatsu K., Nishiyama K., Motogaito A., Miyake H., Iyechika Y., and Maeda T. Phys. Status Solidi (a) 176 (1999) 535
15. Łucznik B., Pastuszka B., Grzegory I., Boćkowski M., Kamler G., Litwin-Staszewska E., and Porowski S. J. Cryst. Growth 281 (2005) 38