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Volumn 101, Issue 3, 2007, Pages

M -plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying GaN flux ratios on m -plane 4H-SiC substrates

Author keywords

[No Author keywords available]

Indexed keywords

FLUXES; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SUBSTRATES; X RAY ANALYSIS;

EID: 33847094173     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435806     Document Type: Article
Times cited : (27)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.