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Volumn 95, Issue 7, 2009, Pages

Demonstration of nonpolar a -plane InGaN/GaN light emitting diode on r -plane sapphire substrate

(8) Hwang, Sung Min a Seo, Yong Gon a Baik, Kwang Hyeon a Cho, In Sung b Baek, Jong Hyeob c Jung, Sukkoo d Kim, Tae Geun e Cho, Meoungwhan f

a Korea Electronic Technology Institute (KETI) (South Korea)

b THELEDS Co Ltd (South Korea)

c Korea Photonics Technology Institute (KOPTI) (South Korea)

d LG Electronics Inc (South Korea)

e Korea University (South Korea)

f Wavesquare Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; C-AXIS DIRECTION; DRIVE CURRENTS; GAN EPITAXIAL LAYERS; INGAN/GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; NON-POLAR; OPTICAL OUTPUT POWER; PEAK EMISSION WAVELENGTH; PLANE SAPPHIRE; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; SMOOTH SURFACE; X RAY ROCKING CURVE;

CORUNDUM; EPITAXIAL LAYERS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; PHYSICAL OPTICS; SAPPHIRE; SEMICONDUCTING GALLIUM; WATER ANALYSIS;

GALLIUM ALLOYS;

EID: 69249171134 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3206666 Document Type: Article

Times cited : (91)

References (16)

1
- 0034710677
- Nirtride semiconductors free of electrostatic fields for efficient white light-emitting diodes
- DOI 10.1038/35022529
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Meinnger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 0028-0836 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
- (2000) Nature , vol.406 , Issue.6798 , pp. 865-868
- Waltereit, P.¹ Brandt, O.² Trampert, A.³ Grahn, H.T.⁴ Monniger, J.⁵ Ramsteiner, M.⁶ Relche, M.⁷ Ploog, K.H.⁸

2
- 17444408562
- Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates
- DOI 10.1143/JJAP.44.L173
- A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBarrs, S. Nakamura, and U. K. Mishra, Jpn. J. Appl. Phys., Part 2 0021-4922 44, L173 (2005). 10.1143/JJAP.44.L173 (Pubitemid 40540796)
- (2005) Japanese Journal of Applied Physics, Part 2: Letters , vol.44 , Issue.1-7
- Chakraborty, A.¹ Haskell, B.A.² Keller, S.³ Speck, J.S.⁴ Denbaars, S.P.⁵ Nakamura, S.⁶ Mishra, U.K.⁷

3
- 33947594911
- Dislocation-free m-Plane InGaN/GaN light-emitting diodes on m-Plane GaN single crystals
- DOI 10.1143/JJAP.45.L1197
- K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, Jpn. J. Appl. Phys., Part 2 45, L1197 (2006). 10.1143/JJAP.45.L1197 (Pubitemid 47434532)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.42-45
- Okamoto, K.¹ Ohta, H.² Nakagawa, D.³ Sonobe, M.⁴ Ichihara, J.⁵ Takasu, H.⁶

4
- 33746319405
- Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates
- DOI 10.1143/JJAP.45.L659
- M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, Jpn. J. Appl. Phys., Part 2 0021-4922 45, L659 (2006). 10.1143/JJAP.45.L659 (Pubitemid 44106937)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.24-28
- Funato, M.¹ Ueda, M.² Kawakami, Y.³ Narukawa, Y.⁴ Kosugi, T.⁵ Takahashi, M.⁶ Mukai, T.⁷

5
- 34250709393
- High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates
- DOI 10.1143/JJAP.46.L129
- A. Tyagi, H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 0021-4922 46, L129 (2007). 10.1143/JJAP.46.L129 (Pubitemid 47252469)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.4-7
- Tyagi, A.¹ Zhong, H.² Fellows, N.N.³ Iza, M.⁴ Speck, J.S.⁵ DenBaars, S.P.⁶ Nakamura, S.⁷

6
- 35649000194
- Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs
- DOI 10.1002/pssr.200701061
- K. -C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Phys. Status Solidi (RRL) 1862-6254 1, 125 (2007). 10.1002/pssr.200701061 (Pubitemid 351175961)
- (2007) Physica Status Solidi - Rapid Research Letetrs , vol.1 , Issue.3 , pp. 125-127
- Kim, K.-C.¹ Schmidt, M.C.² Sato, H.³ Wu, F.⁴ Fellows, N.⁵ Saito, M.⁶ Fujito, K.⁷ Speck, J.S.⁸ Nakamura, S.⁹ DenBaars, S.P.¹⁰

7
- 2542504545
- 0003-6951, 10.1063/1.1738938
- A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstic, V. Mandavilli, J. Yang, and M. A. Khan, Appl. Phys. Lett. 0003-6951 84, 3663 (2004). 10.1063/1.1738938
- (2004) Appl. Phys. Lett. , vol.84 , pp. 3663
- Chitnis, A.¹ Chen, C.² Adivarahan, V.³ Shatalov, M.⁴ Kuokstic, E.⁵ Mandavilli, V.⁶ Yang, J.⁷ Khan, M.A.⁸

8
- 56249106473
- 0022-0248, 10.1016/j.jcrysgro.2008.08.027
- R. Miyagawa, M. Narukawa, B. Ma, H. Miyake, and K. Hiramatsu, J. Cryst. Growth 0022-0248 310, 4979 (2008). 10.1016/j.jcrysgro.2008.08.027
- (2008) J. Cryst. Growth , vol.310 , pp. 4979
- Miyagawa, R.¹ Narukawa, M.² Ma, B.³ Miyake, H.⁴ Hiramatsu, K.⁵

9
- 34548412643
- Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
- DOI 10.1016/j.jcrysgro.2007.07.027, PII S002202480700663X
- S. -N. Lee, H. S. Park, J. K. Son, T. Sakong, O. H. Nam, and Y. Park, J. Cryst. Growth 0022-0248 307, 358 (2007). 10.1016/j.jcrysgro.2007.07.027 (Pubitemid 47368335)
- (2007) Journal of Crystal Growth , vol.307 , Issue.2 , pp. 358-362
- Lee, S.-N.¹ Paek, H.S.² Son, J.K.³ Sakong, T.⁴ Nam, O.H.⁵ Park, Y.⁶

10
- 38849139201
- Demonstration of semipolar (11-22) InGaN/GaN blue-green light emitting diode
- DOI 10.1049/el:20083522
- T. Guhne, P. DeMierry, M. Nemoz, E. Beraudo, S. Chenot, and G. Nataf, IEEE Electron Device Lett. 0741-3106 44, 231 (2008). 10.1049/el:20083522 (Pubitemid 351190998)
- (2008) Electronics Letters , vol.44 , Issue.3 , pp. 231-232
- Guhne, T.¹ DeMierry, P.² Nemoz, M.³ Beraudo, E.⁴ Chenot, S.⁵ Nataf, G.⁶

11
- 42749086595
- 0022-0248, 10.1016/j.jcrysgro.2008.02.007
- J. -J. Huang, T. -Y. Tang, C. -F. Huang, and C. C. Yang, J. Cryst. Growth 0022-0248 310, 2712 (2008). 10.1016/j.jcrysgro.2008.02.007
- (2008) J. Cryst. Growth , vol.310 , pp. 2712
- Huang, J.-J.¹ Tang, T.-Y.² Huang, C.-F.³ Yang, C.C.⁴

12
- 40849118521
- 0003-6951, 10.1063/1.2830023
- J. L. Hollander, M. J. Kappers, C. McAleese, and C. J. Humphreys, Appl. Phys. Lett. 0003-6951 92, 101104 (2008). 10.1063/1.2830023
- (2008) Appl. Phys. Lett. , vol.92 , pp. 101104
- Hollander, J.L.¹ Kappers, M.J.² McAleese, C.³ Humphreys, C.J.⁴

13
- 34147095988
- Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
- DOI 10.1360/03ye0038
- J. Shen, S. Zhang, B. Zhang, H. Zhu, G. Feng, L. Duan, Y. Wang, H. Yang, and W. Zhang, Sci. China, Ser. E: Technol. Sci. 1006-9321 46, 620 (2003). 10.1360/03ye0038 (Pubitemid 46568006)
- (2003) Science in China, Series E: Technological Sciences , vol.46 , Issue.6
- Chen, J.¹ Zhang, S.² Zhang, B.³ Zhu, J.⁴ Feng, G.⁵ Duan, L.⁶ Wang, Y.⁷ Yang, H.⁸ Zheng, W.⁹

14
- 31644449260
- Flat (1120) GaN thin film on precisely offset-controlled (1102) sapphire substrate
- DOI 10.1143/JJAP.44.7418
- M. Imura, A. Hoshino, K. Nakano, M. Tsuda, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 7418 (2005). 10.1143/JJAP.44.7418 (Pubitemid 43167984)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , Issue.10 , pp. 7418-7420
- Imura, M.¹ Hoshino, A.² Nakano, K.³ Tsuda, M.⁴ Iwaya, M.⁵ Kamiyama, S.⁶ Amano, H.⁷ Akasaki, I.⁸

15
- 38549125464
- Effect of misorientation angle of r-plane sapphire substrate on a-plane GaN grown by metalorganic vapor phase epitaxy
- DOI 10.1143/JJAP.47.119
- M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, Jpn. J. Appl. Phys. 47, 119 (2008). 10.1143/JJAP.47.119 (Pubitemid 351162353)
- (2008) Japanese Journal of Applied Physics , vol.47 , Issue.1 , pp. 119-123
- Araki, M.¹ Mochimizo, N.² Hoshino, K.³ Tadatomo, K.⁴

16
- 20144388569
- Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a -plane GaN
- DOI 10.1063/1.1851007, 031901
- A. Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 0003-6951 86, 031901 (2005). 10.1063/1.1851007 (Pubitemid 40493448)
- (2005) Applied Physics Letters , vol.86 , Issue.3 , pp. 1-3
- Chakraborty, A.¹ Keller, S.² Meier, C.³ Haskell, B.A.⁴ Keller, S.⁵ Waltereit, P.⁶ DenBaars, S.P.⁷ Nakamura, S.⁸ Speck, J.S.⁹ Mishra, U.K.¹⁰

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