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MRS Bulletin

Volumn 34, Issue 5, 2009, Pages 313-317

Development of bulk GaN crystals and nonpolar/semipolar substrates by HVPE

(3) Fujito, Kenji a Kubo, Shuichi a Fujimura, Isao a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM ALLOYS; SINGLE CRYSTALS;

GALLIUM NITRIDES (GAN); GAN CRYSTALS; HIGH QUALITY; HYDRIDE VAPOR PHASE EPITAXY; LARGE DIAMETER; LARGE-SIZED; SEMIPOLAR GAN; UNIFORM CRYSTALS;

GALLIUM NITRIDE;

EID: 66749091547 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs2009.92 Document Type: Article

Times cited : (76)

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