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Volumn 96, Issue 23, 2010, Pages

Planar semipolar (10 1̄1) GaN on (11 2̄3) sapphire

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY FLAT SURFACE; CRYSTAL QUALITIES; NEAR BAND EDGE EMISSIONS; SCANNING ELECTRONS; SEMIPOLAR; TRANSMISSION ELECTRON; X RAY ROCKING CURVE;

EID: 77953491275     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3442484     Document Type: Article
Times cited : (39)

References (21)
  • 12
    • 33845463122 scopus 로고    scopus 로고
    • Epitaxial growth and optical properties of semipolar (1122) GaN and InGaN/GaN quantum wells on GaN bulk substrates
    • DOI 10.1063/1.2397029
    • M. Ueda, K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. APPLAB 0003-6951 89, 211907 (2006). 10.1063/1.2397029 (Pubitemid 44892275)
    • (2006) Applied Physics Letters , vol.89 , Issue.21 , pp. 211907
    • Ueda, M.1    Kojima, K.2    Funato, M.3    Kawakami, Y.4    Narukawa, Y.5    Mukai, T.6
  • 17
    • 0037569503 scopus 로고    scopus 로고
    • An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire
    • DOI 10.1002/1521-396X(200112)188:2<629::AID-PSSA629>3.0.CO;2-#
    • B. Kuhn and F. Scholz, Phys. Status Solidi A PSSABA 0031-8965 188, 629 (2001). 10.1002/1521-396X(200112)188:2<629::AID-PSSA629>3.0.CO;2-# (Pubitemid 33700217)
    • (2001) Physica Status Solidi (A) Applied Research , vol.188 , Issue.2 , pp. 629-633
    • Kuhn, B.1    Scholz, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.