-
1
-
-
0642275027
-
-
PRBMDO 0163-1829,. 10.1103/PhysRevB.56.R10024
-
F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 56, R10024 (1997). 10.1103/PhysRevB.56.R10024
-
(1997)
Phys. Rev. B
, vol.56
, pp. 10024
-
-
Bernardini, F.1
Fiorentini, V.2
Vanderbilt, D.3
-
2
-
-
0001598226
-
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
-
DOI 10.1063/1.122247, PII S0003695198023389
-
T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, and I. Akasaki, Appl. Phys. Lett. APPLAB 0003-6951 73, 1691 (1998). 10.1063/1.122247 (Pubitemid 128671954)
-
(1998)
Applied Physics Letters
, vol.73
, Issue.12
, pp. 1691-1693
-
-
Takeuchi, T.1
Wetzel, C.2
Yamaguchi, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
Kaneko, Y.7
Nakagawa, S.8
Yamaoka, Y.9
Yamada, N.10
-
3
-
-
79955984192
-
-
APPLAB 0003-6951,. 10.1063/1.1493220
-
M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. APPLAB 0003-6951 81, 469 (2002). 10.1063/1.1493220
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 469
-
-
Craven, M.D.1
Lim, S.H.2
Wu, F.3
Speck, J.S.4
Denbaars, S.P.5
-
4
-
-
34547857814
-
Stability of (1100) m-plane GaN films grown by metalorganic chemical vapor deposition
-
DOI 10.1143/JJAP.45.8644
-
B. Imer, F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 45, 8644 (2006). 10.1143/JJAP.45.8644 (Pubitemid 47253117)
-
(2006)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.45
, Issue.11
, pp. 8644-8647
-
-
Imer, B.1
Wu, F.2
Craven, M.D.3
Speck, J.S.4
DenBaars, S.P.5
-
5
-
-
54249168584
-
-
JJAPA5 0021-4922,. 10.1143/JJAP.47.3074
-
A. -T. Cheng, Y. -K. Su, W. -C. Lai, and Y. -Z. Chen, Jpn. J. Appl. Phys. JJAPA5 0021-4922 47, 3074 (2008). 10.1143/JJAP.47.3074
-
(2008)
Jpn. J. Appl. Phys.
, vol.47
, pp. 3074
-
-
Cheng, A.-T.1
Su, Y.-K.2
Lai, W.-C.3
Chen, Y.-Z.4
-
6
-
-
3042587667
-
-
APPLAB 0003-6951,. 10.1063/1.1758300
-
T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki, Appl. Phys. Lett. APPLAB 0003-6951 84, 4717 (2004). 10.1063/1.1758300
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 4717
-
-
Hikosaka, T.1
Narita, T.2
Honda, Y.3
Yamaguchi, M.4
Sawaki, N.5
-
7
-
-
30344478252
-
Characterization of planar semipolar gallium nitride films on spinel substrates
-
DOI 10.1143/JJAP.44.L920
-
T. J. Baker, B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 44, L920 (2005). 10.1143/JJAP.44.L920 (Pubitemid 43065112)
-
(2005)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.44
, Issue.28-32
-
-
Baker, T.J.1
Haskell, B.A.2
Wu, F.3
Fini, P.T.4
Speck, J.S.5
Nakamura, S.6
-
8
-
-
33746621744
-
Bright semipolar GaInN/GaN blue light emitting diode on side facets of selectively grown GaN stripes
-
DOI 10.1063/1.2240307
-
T. Wunderer, P. Brückner, B. Neubert, F. Scholz, M. Feneberg, F. Lipski, M. Schirra, and K. Thonke, Appl. Phys. Lett. APPLAB 0003-6951 89, 041121 (2006). 10.1063/1.2240307 (Pubitemid 44147526)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.4
, pp. 041121
-
-
Wunderer, T.1
Bruckner, P.2
Neubert, B.3
Scholz, F.4
Feneberg, M.5
Lipski, F.6
Schirra, M.7
Thonke, K.8
-
9
-
-
32044473082
-
Characterization of planar semipolar gallium nitride films on sapphire substrates
-
DOI 10.1143/JJAP.45.L154
-
T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 45, L154 (2006). 10.1143/JJAP.45.L154 (Pubitemid 43200832)
-
(2006)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.45
, Issue.4-7
-
-
Baker, T.J.1
Haskell, B.A.2
Wu, F.3
Speck, J.S.4
Nakamura, S.5
-
10
-
-
8644267611
-
-
APPLAB 0003-6951,. 10.1063/1.1806266
-
K. Nishizuka, M. Funato, Y. Kawakami, S. Fujita, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. APPLAB 0003-6951 85, 3122 (2004). 10.1063/1.1806266
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3122
-
-
Nishizuka, K.1
Funato, M.2
Kawakami, Y.3
Fujita, S.4
Narukawa, Y.5
Mukai, T.6
-
11
-
-
70349112567
-
-
APECE4 1882-0778,. 10.1143/APEX.2.091001
-
N. Okada, A. Kurisu, K. Murakami, and K. Tadatomo, Appl. Phys. Express APECE4 1882-0778 2, 091001 (2009). 10.1143/APEX.2.091001
-
(2009)
Appl. Phys. Express
, vol.2
, pp. 091001
-
-
Okada, N.1
Kurisu, A.2
Murakami, K.3
Tadatomo, K.4
-
12
-
-
33845463122
-
Epitaxial growth and optical properties of semipolar (1122) GaN and InGaN/GaN quantum wells on GaN bulk substrates
-
DOI 10.1063/1.2397029
-
M. Ueda, K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. APPLAB 0003-6951 89, 211907 (2006). 10.1063/1.2397029 (Pubitemid 44892275)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.21
, pp. 211907
-
-
Ueda, M.1
Kojima, K.2
Funato, M.3
Kawakami, Y.4
Narukawa, Y.5
Mukai, T.6
-
13
-
-
33748458139
-
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
-
DOI 10.1063/1.2236901
-
T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N. M. Williams, and M. Tutor, Appl. Phys. Lett. APPLAB 0003-6951 89, 051914 (2006). 10.1063/1.2236901 (Pubitemid 44350231)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.5
, pp. 051914
-
-
Paskova, T.1
Kroeger, R.2
Figge, S.3
Hommel, D.4
Darakchieva, V.5
Monemar, B.6
Preble, E.7
Hanser, A.8
Williams, N.M.9
Tutor, M.10
-
14
-
-
33845788152
-
Piezoelectric fields in GaInN/GaN quantum wells on different crystal facets
-
DOI 10.1063/1.2405866
-
M. Feneberg, F. Lipski, R. Sauer, K. Thonke, T. Wunderer, B. Neubert, P. Brückner, and F. Scholz, Appl. Phys. Lett. APPLAB 0003-6951 89, 242112 (2006). 10.1063/1.2405866 (Pubitemid 44974932)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.24
, pp. 242112
-
-
Feneberg, M.1
Lipski, F.2
Sauer, R.3
Thonke, K.4
Wunderer, T.5
Neubert, B.6
Bruckner, P.7
Scholz, F.8
-
15
-
-
66849123409
-
-
ZZZZZZ 1610-1634,. 10.1002/pssc.200778406
-
T. Wunderer, F. Lipski, J. Hertkorn, P. Brückner, F. Scholz, M. Feneberg, M. Schirra, K. Thonke, A. Chuvilin, and U. Kaiser, Phys. Status Solidi C ZZZZZZ 1610-1634 5, 2059 (2008). 10.1002/pssc.200778406
-
(2008)
Phys. Status Solidi C
, vol.5
, pp. 2059
-
-
Wunderer, T.1
Lipski, F.2
Hertkorn, J.3
Brückner, P.4
Scholz, F.5
Feneberg, M.6
Schirra, M.7
Thonke, K.8
Chuvilin, A.9
Kaiser, U.10
-
16
-
-
66849129387
-
-
MRSBEA 0883-7694.
-
F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke, MRS Bull. MRSBEA 0883-7694 34, 328 (2009).
-
(2009)
MRS Bull.
, vol.34
, pp. 328
-
-
Scholz, F.1
Wunderer, T.2
Neubert, B.3
Feneberg, M.4
Thonke, K.5
-
17
-
-
0037569503
-
An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire
-
DOI 10.1002/1521-396X(200112)188:2<629::AID-PSSA629>3.0.CO;2-#
-
B. Kuhn and F. Scholz, Phys. Status Solidi A PSSABA 0031-8965 188, 629 (2001). 10.1002/1521-396X(200112)188:2<629::AID-PSSA629>3.0.CO;2-# (Pubitemid 33700217)
-
(2001)
Physica Status Solidi (A) Applied Research
, vol.188
, Issue.2
, pp. 629-633
-
-
Kuhn, B.1
Scholz, F.2
-
18
-
-
34748916930
-
Optimization of nucleation and buffer layer growth for improved GaN quality
-
DOI 10.1016/j.jcrysgro.2007.07.056, PII S0022024807006975
-
J. Hertkorn, P. Brückner, S. B. Thapa, T. Wunderer, F. Scholz, M. Feneberg, K. Thonke, R. Sauer, M. Beer, and J. Zweck, J. Cryst. Growth JCRGAE 0022-0248 308, 30 (2007). 10.1016/j.jcrysgro.2007.07.056 (Pubitemid 47488364)
-
(2007)
Journal of Crystal Growth
, vol.308
, Issue.1
, pp. 30-36
-
-
Hertkorn, J.1
Bruckner, P.2
Thapa, S.B.3
Wunderer, T.4
Scholz, F.5
Feneberg, M.6
Thonke, K.7
Sauer, R.8
Beer, M.9
Zweck, J.10
-
19
-
-
19744382873
-
Luminescence from stacking faults in gallium nitride
-
DOI 10.1063/1.1852085, 021908
-
R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Wang, and M. A. Khan, Appl. Phys. Lett. APPLAB 0003-6951 86, 021908 (2005). 10.1063/1.1852085 (Pubitemid 40211639)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.2
, pp. 0219081-0219083
-
-
Liu, R.1
Bell, A.2
Ponce, F.A.3
Chen, C.Q.4
Yang, J.W.5
Khan, M.A.6
-
20
-
-
84889327360
-
-
edited by T. Paskova (Wiley, New York). 10.1002/9783527623150
-
Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices, edited by, T. Paskova, (Wiley, New York, 2008). 10.1002/9783527623150
-
(2008)
Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices
-
-
-
21
-
-
27844537905
-
Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
-
DOI 10.1063/1.2128496, 093519
-
P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, J. Appl. Phys. JAPIAU 0021-8979 98, 093519 (2005). 10.1063/1.2128496 (Pubitemid 41655986)
-
(2005)
Journal of Applied Physics
, vol.98
, Issue.9
, pp. 1-5
-
-
Paskov, P.P.1
Schifano, R.2
Monemar, B.3
Paskova, T.4
Figge, S.5
Hommel, D.6
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