Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 83, Issue 8, 2003, Pages 1554-1556

  Haskell, B A ^a,b   Wu, F ^a,b   Matsuda, S ^a   Craven, M D ^a,b   Fini, P T ^a,b   DenBaars, S P ^a,b   Speck, J S ^a,b   Nakamura, Shuji ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRACKS; HYDRIDES; MORPHOLOGY; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

CRACK HEALING;

GALLIUM NITRIDE;

EID: 0042782831     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1604174     Document Type: Article

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