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Volumn 248, Issue 3, 2011, Pages 600-604

Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

Author keywords

GaInN; Metal organic vapor phase epitaxy; Photoluminescence; Quantum wells; X ray diffraction

Indexed keywords


EID: 79951740982     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201046334     Document Type: Article
Times cited : (16)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.