Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Wang, Te Chung ^d   Lu, Tien Chang ^a   Ko, Tsung Shine ^d   Kuo, Hao Chung ^a   Yu, Min ^d   Wang, Sing Chung ^d   Chuo, Chang Cheng ^b   Lee, Zheng Hong ^b   Chen, Hou Guang ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c I SHOU UNIVERSITY   (Taiwan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

A -PLANE GAN FILMS; CRYSTAL QUALITY; DISLOCATION DENSITY; TRENCHED EPITAXIAL LATERAL OVERGROWTH (TELOG);

ANISOTROPY; CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 33845962798     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405880     Document Type: Article

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