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Volumn 103, Issue 1, 2008, Pages

Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition

(8) Fang, H a Yang, Z J a Wang, Y a Dai, T a Sang, L W a Zhao, L B a Yu, T J a Zhang, G Y a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; INDIUM COMPOUNDS; MASS TRANSFER;

GRADIENT INDIUM; INHOMOGENEOUS THICKNESS;

CHEMICAL VAPOR DEPOSITION;

EID: 38149092572 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2829784 Document Type: Article

Times cited : (35)

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