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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Nonpolar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

(7) Ni, X a Wu, M a Lee, J a Li, X a Baski, A A a Ozgur U a Morko H a

a Virginia Commonwealth University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CARRIER DENSITY; DOUBLE HETEROSTRUCTURES; GAN FILM; GAN GROWTH; GAN TEMPLATE; HIGH QUALITY; INTERNAL QUANTUM EFFICIENCY; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; NON-POLAR; NONPOLAR M-PLANE; SI SUBSTRATES; SI(112);

COALESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE; SUBSTRATES; VAPORS;

GALLIUM ALLOYS;

EID: 70349490455 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3225157 Document Type: Article

Times cited : (40)

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