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Volumn 6, Issue SUPPL. 2, 2009, Pages
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Fabrication of 3D InGaN/GaN structures providing semipolar GaN planes for efficient green light emission
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Author keywords
[No Author keywords available]
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Indexed keywords
EFFECTIVE AREA;
FABRICATION METHOD;
GAN GROWTH;
GREEN LIGHT EMISSION;
GROWTH SPEED;
INGAN/GAN;
LIGHT OUTCOUPLING;
MATERIAL QUALITY;
PIEZO-ELECTRIC FIELDS;
PL MEASUREMENTS;
QUANTUM-CONFINED STARK EFFECT;
SELECTIVE EPITAXY;
SEMIPOLAR;
GALLIUM ALLOYS;
LIGHT EMISSION;
SEMICONDUCTOR QUANTUM WELLS;
SPECTROSCOPY;
THREE DIMENSIONAL;
GALLIUM NITRIDE;
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EID: 77955786150
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200880867 Document Type: Article |
Times cited : (11)
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References (11)
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