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Volumn 6, Issue SUPPL. 2, 2009, Pages

Fabrication of 3D InGaN/GaN structures providing semipolar GaN planes for efficient green light emission

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE AREA; FABRICATION METHOD; GAN GROWTH; GREEN LIGHT EMISSION; GROWTH SPEED; INGAN/GAN; LIGHT OUTCOUPLING; MATERIAL QUALITY; PIEZO-ELECTRIC FIELDS; PL MEASUREMENTS; QUANTUM-CONFINED STARK EFFECT; SELECTIVE EPITAXY; SEMIPOLAR;

EID: 77955786150     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880867     Document Type: Article
Times cited : (11)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.