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Volumn 312, Issue 15, 2010, Pages 2171-2174
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Orientation control of GaN {112̄2} and {101̄3̄} grown of (101̄0) sapphire by metal-organic vapor phase epitaxy
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Author keywords
A1. MOVPE; A2. Single crystal structure; B1. GaN; B1. Nitrides; B1. Sapphire
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Indexed keywords
A1. MOVPE;
A2. SINGLE CRYSTAL STRUCTURE;
B1. GAN;
GAS-FLOW VELOCITY;
M-PLANE;
METAL-ORGANIC VAPOR PHASE EPITAXY;
MOVPE;
ORIENTATION CONTROL;
POLYCRYSTALLINE;
RECRYSTALLIZATION PROCESS;
RECRYSTALLIZATIONS;
SEMIPOLAR;
SMOOTH LAYER;
SURFACE ORIENTATION;
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
RECRYSTALLIZATION (METALLURGY);
SAPPHIRE;
SINGLE CRYSTALS;
VAPORS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 77955277474
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.043 Document Type: Article |
Times cited : (45)
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References (13)
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