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Volumn 312, Issue 15, 2010, Pages 2171-2174

Orientation control of GaN {112̄2} and {101̄3̄} grown of (101̄0) sapphire by metal-organic vapor phase epitaxy

Author keywords

A1. MOVPE; A2. Single crystal structure; B1. GaN; B1. Nitrides; B1. Sapphire

Indexed keywords

A1. MOVPE; A2. SINGLE CRYSTAL STRUCTURE; B1. GAN; GAS-FLOW VELOCITY; M-PLANE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; ORIENTATION CONTROL; POLYCRYSTALLINE; RECRYSTALLIZATION PROCESS; RECRYSTALLIZATIONS; SEMIPOLAR; SMOOTH LAYER; SURFACE ORIENTATION;

EID: 77955277474     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.043     Document Type: Article
Times cited : (45)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.