Optimization of (112̄0) a-plane GaN growth by MOCVD on (11̄02) r-plane sapphire

Journal of Crystal Growth

Volumn 290, Issue 1, 2006, Pages 166-170

  Ni, X ^a   Fu, Y ^a   Moon, Y T ^a   Biyikli, N ^a   Morkoc H ^a,b  

^a Virginia Commonwealth University   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTIMIZATION; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

GAN FILMS; HIGH TEMPERATURE CONDITIONS; SEMICONDUCTING III-V MATERIALS; SURFACE UNDULATIONS;

GALLIUM NITRIDE;

EID: 33645029832     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.008     Document Type: Article

References (10)

1. R. Langer, J. Simon, V. Ortiz, N.T. Pelekanos, A. Barski, R. Andre, and M. Godlewski Appl. Phys. Lett 74 1999 3827
2. T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura Jpn. J. Appl. Phys. Part 2 - Lett. 38 8B 1999 L914
3. H.M. Ng Appl. Phys. Lett. 80 2002 4369
4. M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars Appl. Phys. Lett. 81 2002 469
5. M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars Appl. Phys. Lett. 81 2002 1201
6. C.Q. Chen, J.W. Yang, H.M. Wang, J.P. Zhang, V. Adivarahan, M. Gaevski, E. Kuokstis, Z. Gong, M. Su, and M.A. Khan Jpn. J. Appl. Phys. Part 2 - Lett. 42 6B 2003 L640
7. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M.A. Khan Appl. Phys. Lett. 84 2004 3663
8. F. Wu, M.D. Craven, S. Lim, and J.S. Speck J. Appl. Phys. 94 2003 942
9. H.M. Wang, C.Q. Chen, Z. Gong, J.P. Zhang, M. Gaevski, M. Su, J.W. Yang, and M.A. Khan Appl. Phys. Lett. 84 2004 499
10. H.-P. Schönherr, J. Fricke, Z. Niu, K.-J. Friedland, R. Nötzel, and K.H. Ploog Appl. Phys. Lett. 72 1998 566