Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4976-4978

  Mauder, C ^a   Rahimzadeh Khoshroo, L ^a   Behmenburg, H ^a   Wen, T C ^a   Dikme, Y ^b   Rzheutskii, M V ^c   Yablonskii, G P ^c   Woitok, J ^d   Chou, M M C ^e   Heuken, M ^a,b   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

^c B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^d MALVERN INSTRUMENTS LTD   (United Kingdom)

^e NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

A1. Defects; A1. X ray diffraction; A3. Chemical vapor deposition processes; B2. Semiconducting III V materials

Indexed keywords

BUFFER LAYERS; DEFECT DENSITY; DEFECTS; EPITAXIAL LAYERS; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; OPTICAL WAVEGUIDES; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; STACKING FAULTS;

A1. DEFECTS; A1. X-RAY DIFFRACTION; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; B2. SEMICONDUCTING III-V MATERIALS; BACKGROUND DOPING; BASAL PLANE STACKING FAULTS; DAP TRANSITIONS; EXCITONIC TRANSITIONS; FILM RELAXATIONS; GAN BUFFER LAYERS; GAN FILMS; GAN LAYERS; INGAN BUFFER LAYERS; M PLANES; NITROGEN AMBIENT; ROCKING CURVES; SEALING LAYERS;

GALLIUM ALLOYS;

EID: 56249086067     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.053     Document Type: Article

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