Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1307-1310

  Chang, Shih Pang ^a,b   Yang, Hung Chih ^b   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

A1. Nucleation layer; A3. MOVPE; A3. V III ratio; B1. GaN; B2. Nonpolar

Indexed keywords

A-PLANE GAN; CRYSTALLINE QUALITY; GAN TEMPLATE; GROWTH PARAMETERS; MOVPE; NEAR-BAND EDGE LUMINESCENCE; NON-POLAR; NUCLEATION LAYERS; OPTICAL QUALITIES; STRUCTURAL AND OPTICAL PROPERTIES; V/III RATIO;

CRYSTALLINE MATERIALS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; OPTICAL PROPERTIES; X RAY DIFFRACTION;

NUCLEATION;

EID: 77949631287     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.059     Document Type: Article

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