Optimization of nucleation and buffer layer growth for improved GaN quality

Journal of Crystal Growth

Volumn 308, Issue 1, 2007, Pages 30-36

  Hertkorn, J ^a   Bruckner P ^a   Thapa, S B ^a   Wunderer, T ^a   Scholz, F ^a   Feneberg, M ^a   Thonke, K ^a   Sauer, R ^a   Beer, M ^b   Zweck, J ^b  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

A1. Atomic force microscopy; A1. High resolution X ray diffraction; A1. Nucleation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; X RAY DIFFRACTION;

BUFFER LAYER GROWTH; CRYSTAL QUALITY; DISLOCATION DENSITY; HIGH RESOLUTION X-RAY DIFFRACTION;

BUFFER LAYERS;

EID: 34748916930     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.056     Document Type: Article

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