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Volumn 158, Issue 10, 2011, Pages

Improvement of (11-22) GaN on m-plane sapphire with CrN interlayer by using molecular beam epitaxy

(8) Liu, Kuang Wei a Chang, Shoou Jinn a Young, Sheng Joue b Hsueh, Tao Hung a Hung, Hung a Mai, Yu Chun a Wang, Shih Ming a Chen, Yue Zhang a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL FORMOSA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL STACKING FAULTS; CRYSTALLINE QUALITY; DEFECT-RELATED EMISSION; EMISSION PEAKS; LOW TEMPERATURES; M-PLANE; NEAR BAND EDGE; PL MEASUREMENTS; PL SPECTRA; TEMPERATURE DEPENDENT; THREADING DISLOCATION; X-RAY DIFFRACTION SYSTEM;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MOLECULAR BEAMS;

EID: 80052099619 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3615957 Document Type: Article

Times cited : (11)

References (20)

1
- 0036590719
- 10.1109/6.999791
- L. F Eastman and U.K. Mishra, IEEE Spectrum, 39, 28 (2002). 10.1109/6.999791
- (2002) IEEE Spectrum , vol.39 , pp. 28
- Eastman, L.F.¹ Mishra, U.K.²

2
- 0035851454
- 10.1063/1.1415043
- E. Feltin, B. Beaumont, M. Lagt, P. de Mierry, P. Venngus, H. Lahrche, M. Leroux, and P. Gibart, Appl. Phys. Lett., 79, 3230 (2001). 10.1063/1.1415043
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3230
- Feltin, E.¹ Beaumont, B.² Lagt, M.³ De Mierry, P.⁴ Venngus, P.⁵ Lahrche, H.⁶ Leroux, M.⁷ Gibart, P.⁸

3
- 0642275027
- 10.1103/PhysRevB.56.R10024
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B, 56, R10024 (1997). 10.1103/PhysRevB.56.R10024
- (1997) Phys. Rev. B , vol.56 , pp. 10024
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

4
- 34250652683
- Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes
- DOI 10.1143/JJAP.46.L187
- K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. takasu, Jpn. J. Appl. Phys., Part 2, 46, L187 (2007). 10.1143/JJAP.46.L187 (Pubitemid 47252436)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.8-11
- Okamoto, K.¹ Ohta, H.² Chichibu, S.F.³ Ichihara, J.⁴ Takasu, H.⁵

5
- 34250760712
- High power and high external efficiency m-plane InGaN light emitting diodes
- DOI 10.1143/JJAP.46.L126
- M. C. Schmidt, K.-C. Kim, H. Sato, N. Fellows, H. Masui, S. Nakamura, S. P. DenBaars, and J. S. Speck, Jpn. J. Appl. Phys., Part 2, 46, L126 (2007). 10.1143/JJAP.46.L126 (Pubitemid 47252468)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.4-7
- Schmidt, M.C.¹ Kim, K.-C.² Sato, H.³ Fellows, N.⁴ Masui, H.⁵ Nakamura, S.⁶ DenBaars, S.P.⁷ Speck, J.S.⁸

6
- 0034710677
- Nirtride semiconductors free of electrostatic fields for efficient white light-emitting diodes
- DOI 10.1038/35022529
- P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature, 406, 865 (2000). 10.1038/35022529 (Pubitemid 30664256)
- (2000) Nature , vol.406 , Issue.6798 , pp. 865-868
- Waltereit, P.¹ Brandt, O.² Trampert, A.³ Grahn, H.T.⁴ Monniger, J.⁵ Ramsteiner, M.⁶ Relche, M.⁷ Ploog, K.H.⁸

7
- 17944381225
- Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
- DOI 10.1063/1.1875765, 111101
- N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, Appl. Phys. Lett., 86, 111101 (2005). 10.1063/1.1875765 (Pubitemid 40596970)
- (2005) Applied Physics Letters , vol.86 , Issue.11 , pp. 1-3
- Gardner, N.F.¹ Kim, J.C.² Wierer, J.J.³ Shen, Y.C.⁴ Krames, M.R.⁵

8
- 32044473082
- Characterization of planar semipolar gallium nitride films on sapphire substrates
- DOI 10.1143/JJAP.45.L154
- T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, Jpn. J. Appl. Phys., 45 (6), L154 (2006). 10.1143/JJAP.45.L154 (Pubitemid 43200832)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.4-7
- Baker, T.J.¹ Haskell, B.A.² Wu, F.³ Speck, J.S.⁴ Nakamura, S.⁵

9
- 0042855995
- 10.1063/1.1578530
- R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, and J. S. Speck, J. Appl. Phys., 94, 942 (2003). 10.1063/1.1578530
- (2003) J. Appl. Phys. , vol.94 , pp. 942
- Sharma, R.¹ Pattison, P.M.² Masui, H.³ Farrell, R.M.⁴ Baker, T.J.⁵ Haskell, B.A.⁶ Wu, F.⁷ Denbaars, S.P.⁸ Speck, J.S.⁹

10
- 0011796924
- 10.1063/1.1305830
- B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J.Appl. Phys., 88, 1855 (2000). 10.1063/1.1305830
- (2000) J.Appl. Phys. , vol.88 , pp. 1855
- Heying, B.¹ Averbeck, R.² Chen, L.F.³ Haus, E.⁴ Riechert, H.⁵ Speck, J.S.⁶

11
- 34247891757
- Epitaxial lateral overgrowth of (11 2- 2) semipolar GaN on (1 1- 00) m -plane sapphire by metalorganic chemical vapor deposition
- DOI 10.1063/1.2735558
- X. Ni,. zgr, A. A. Baski, and H. Morkoc, Appl. Phys. Lett., 90, 182109 (2007). 10.1063/1.2735558 (Pubitemid 46701172)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 182109
- Ni, X.¹ Ozgur, U.² Baski, A.A.³ Morko, H.⁴ Zhou, L.⁵ Smith, D.J.⁶ Tran, C.A.⁷

12
- 33746344674
- 10.1002/pssc.v3:6
- W. H. Lee, S. W. Lee, H. Goto, H. C. Ko, M. W. Cho, and T. Yao, Phys. Status. Solidi C, 3 (6), 1388 (2006). 10.1002/pssc.v3:6
- (2006) Phys. Status. Solidi C , vol.3 , Issue.6 , pp. 1388
- Lee, W.H.¹ Lee, S.W.² Goto, H.³ Ko, H.C.⁴ Cho, M.W.⁵ Yao, T.⁶

13
- 33746344674
- 10.1002/pssc.v3:6
- W. Lee, S. Lee, H. Goto, H. Ko, M. Cho, and T. Yao, Phys. Status Solidi C, 3 (6), 1388 (2006). 10.1002/pssc.v3:6
- (2006) Phys. Status Solidi C , vol.3 , Issue.6 , pp. 1388
- Lee, W.¹ Lee, S.² Goto, H.³ Ko, H.⁴ Cho, M.⁵ Yao, T.⁶

14
- 40549114606
- Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands
- DOI 10.1063/1.2890488
- J. S. Ha, H. J. Lee, S. W. Lee, H. J. Lee, S. H. Lee, H. Goto, M. W. Cho, T. Yao, S. K. Hong, R. Toba, Appl. Phys. Lett., 92, 091906 (2008). 10.1063/1.2890488 (Pubitemid 351357369)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 091906
- Ha, J.-S.¹ Lee, H.-J.² Lee, S.W.³ Lee, H.J.⁴ Lee, S.H.⁵ Goto, H.⁶ Cho, M.W.⁷ Yao, T.⁸ Hong, S.-K.⁹ Toba, R.¹⁰ Lee, J.W.¹¹ Lee, J.Y.¹²

15
- 33847094173
- M -plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying GaN flux ratios on m -plane 4H-SiC substrates
- DOI 10.1063/1.2435806
- R. Armitage, M. Horita, J. Suda, and T. Kimito, J. Appl. Phys., 101, 033534 (2007). 10.1063/1.2435806 (Pubitemid 46280867)
- (2007) Journal of Applied Physics , vol.101 , Issue.3 , pp. 033534
- Armitage, R.¹ Horita, M.² Suda, J.³ Kimoto, T.⁴

16
- 19744382873
- Luminescence from stacking faults in gallium nitride
- DOI 10.1063/1.1852085, 021908
- R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, Appl. Phys. Lett., 86, 021908 (2005). 10.1063/1.1852085 (Pubitemid 40211639)
- (2005) Applied Physics Letters , vol.86 , Issue.2 , pp. 0219081-0219083
- Liu, R.¹ Bell, A.² Ponce, F.A.³ Chen, C.Q.⁴ Yang, J.W.⁵ Khan, M.A.⁶

17
- 40949094104
- 10.1103/PhysRevB.77.075308
- T. Guhne, Z. Bougrioua, S. Laugt, M. Nemoz, P. Vennegues, B. Vinter, and M. Leroux, Phys. Rev. B, 77, 075308 (2008). 10.1103/PhysRevB.77.075308
- (2008) Phys. Rev. B , vol.77 , pp. 075308
- Guhne, T.¹ Bougrioua, Z.² Laugt, S.³ Nemoz, M.⁴ Vennegues, P.⁵ Vinter, B.⁶ Leroux, M.⁷

18
- 27844537905
- Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
- DOI 10.1063/1.2128496, 093519
- P. P. Paskov, R. Schifano, B. Monemar, T. Paskov, S. Figge, and D. Hommel, J. Appl. Phys., 98, 093519 (2005). 10.1063/1.2128496 (Pubitemid 41655986)
- (2005) Journal of Applied Physics , vol.98 , Issue.9 , pp. 1-5
- Paskov, P.P.¹ Schifano, R.² Monemar, B.³ Paskova, T.⁴ Figge, S.⁵ Hommel, D.⁶

19
- 77953150093
- 10.1149/1.3425820
- T. B. Wei, Q. Hu, R. F. Duan, X. C. Wei, J. K. Yang, J. X. Wang, Y. P. Zeng, G. H. Wang, and J. M. Li, J. Electrochem. Soc., 157, H721 (2010). 10.1149/1.3425820
- (2010) J. Electrochem. Soc. , vol.157 , pp. 721
- Wei, T.B.¹ Hu, Q.² Duan, R.F.³ Wei, X.C.⁴ Yang, J.K.⁵ Wang, J.X.⁶ Zeng, Y.P.⁷ Wang, G.H.⁸ Li, J.M.⁹

20
- 0035886060
- 10.1063/1.1402147
- R. Pssler, J. Appl. Phys., 90, 3956 (2001). 10.1063/1.1402147
- (2001) J. Appl. Phys. , vol.90 , pp. 3956
- Pssler, R.¹

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