a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 186-189

  Zhu, T ^a   Martin, D ^a   Butte R ^a   Napierala, J ^a   Grandjean, N ^a  

^a EPFL   (Switzerland)

Author keywords

A1. HRXRD; A1. Morphology; A1. Structure; A3. HVPE; B1. GaN

Indexed keywords

ATMOSPHERIC PRESSURE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; X RAY DIFFRACTION;

FULL-WIDTHS AT HALF-MAXIMUM (FWHM); HIGH-TEMPERATURE (HT) GROWTH; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

CRYSTAL GROWTH;

EID: 33847330071     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.010     Document Type: Article

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