Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Journal of Crystal Growth

Volumn 312, Issue 11, 2010, Pages 1823-1827

  Mauder, C ^a   Reuters, B ^a   Rahimzadeh Khoshroo, L ^a   Rzheutskii, M V ^b   Lutsenko, E V ^b   Yablonskii, G P ^b   Woitok, J F ^c   Heuken, M ^a,d   Kalisch, H ^a   Jansen, R H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^c MALVERN INSTRUMENTS LTD   (United Kingdom)

^d AIXTRON AG   (Germany)

Author keywords

A1. Defects; A1. X ray diffraction; A3. Chemical vapour deposition processes; B2. Semiconducting III V materials

Indexed keywords

ANISOTROPIC FILMS; B2. SEMICONDUCTING III-V MATERIALS; BACKGROUND ELECTRON CONCENTRATION; BASAL PLANE STACKING FAULTS; CHEMICAL VAPOUR DEPOSITION; CRITICAL THICKNESS; IN-PLANE COMPRESSIVE STRAIN; LOW TEMPERATURE PHOTOLUMINESCENCE; M-PLANE; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; MOVPE GROWTH; NEAR BAND EDGE; PLANAR DEFECT; PRISMATIC PLANES; SEMI CONDUCTING III-V MATERIALS; SURFACE STEPS; SURFACE-ROUGHENING; WEAK SIGNALS; X RAY BEAM; X RAY ROCKING CURVE;

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC FILMS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; STACKING FAULTS; SULFUR COMPOUNDS; SURFACE DEFECTS; X RAY DIFFRACTION;

FILM GROWTH;

EID: 77951203957     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.03.010     Document Type: Article

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