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Volumn 2, Issue 9, 2009, Pages

Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202̄1} GaN substrates

(11) Yoshizumi, Yusuke a Adachi, Masahiro a Enya, Yohei a Kyono, Takashi a Tokuyama, Shinji a Sumitomo, Takamichi a Akita, Katsushi a Ikegami, Takatoshi a Ueno, Masaki a Katayama, Koji a Nakamura, Takao a

a SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING LAYER; CONTINUOUS WAVE OPERATION; GAN SUBSTRATE; GREEN LASER; INALGAN; LASER DIODES; LATTICE-MATCHED; RIDGE WAVEGUIDE LASERS; ROOM TEMPERATURE; THRESHOLD CURRENTS;

EPITAXIAL LAYERS; GALLIUM NITRIDE; LASER CLADDING; LASERS; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 70349105024 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.092101 Document Type: Article

Times cited : (198)

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