SCOPUS 정보 검색 플랫폼

Volumn 318, Issue 1, 2011, Pages 500-504

Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

(14) Chiu, Ching Hsueh a Lin, Da Wei a Lin, Chien Chung a Li, Zhen Yu a Chen, Yi Chen a Ling, Shih Chun a,b Kuo, Hao Chung a Lu, Tien Chang a Wang, Shing Chung a Liao, Wei Tsai b Tanikawa, Tomoyuki c Honda, Yoshio c Yamaguchi, Masahito c Sawaki, Nobuhiko d

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

c NAGOYA UNIVERSITY (Japan)

d AICHI INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B1. Nitride; B2. Semiconductor IIIV materials; B3. Light emitting diode

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDE; B2. SEMICONDUCTOR IIIV MATERIALS; B3. LIGHT EMITTING DIODE; QUANTUM WELL;

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; COALESCENCE; ELECTRIC FIELDS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DIODES; VAPOR DEPOSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79952737059 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.054 Document Type: Conference Paper

Times cited : (17)

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