Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire

Journal of Crystal Growth

Volumn 310, Issue 12, 2008, Pages 2981-2986

  Zhou, Lin ^a   Chandrasekaran, R ^b   Moustakas, T D ^b   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Boston University   (United States)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CHARACTERIZATION; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

BASAL PLANE STACKING FAULTS; INVERSION DOMAIN BOUNDARIES (IDB);

THICK FILMS;

EID: 44149096666     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.013     Document Type: Article

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