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Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

(7) Feng, W a Kuryatkov, V V a Chandolu, A a Song, D Y a Pandikunta, M a Nikishin, S A a Holtz, M a

a TEXAS TECH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SURFACE DIFFUSION;

AT WAVELENGTHS; CATHODOLUMINESCENCE SPECTROSCOPIES; GREEN LIGHT EMISSIONS; MULTIPLE QUANTUM WELLS; PEAK INTENSITIES; PEAK WAVELENGTHS; SCANNING ELECTRON MICROSCOPES; SELECTIVE AREA EPITAXIES; SIDE-WALLS; SPATIAL EXTENTS; SURFACE MIGRATIONS; VAPOR DIFFUSIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 57049163011 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3029695 Document Type: Article

Times cited : (36)

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