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Volumn 44, Issue 50-52, 2005, Pages

Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate

Author keywords

a plane GaN; Hall effect measurement; Mg; p type; PL; r plane sapphire

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR DOPING;

A-PLANE GAN; HALL-EFFECT MEASUREMENTS; P-TYPE; PL; R-PLANE SAPPHIRE;

GALLIUM NITRIDE;

EID: 31844442696 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L1516 Document Type: Article

Times cited : (46)

References (10)

1
- 0023040588
- H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

2
- 0000547404
- H. Amano and I. Akasaki: Mater. Res. Soc. Ext. Abstr. EA-21 (1991) 165.
- (1991) Mater. Res. Soc. Ext. Abstr. , vol.EA-21 , pp. 165
- Amano, H.¹ Akasaki, I.²

3
- 84883188181
- H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112.
- (1989) Jpn. J. Appl. Phys. , vol.28
- Amano, H.¹ Kito, M.² Hiramatsu, K.³ Akasaki, I.⁴

4
- 0025432263
- H. Amano, M. Kitoh, K. Hiramatsu and I. Akasaki: J. Electrochem. Soc. 137 (1990) 1639.
- (1990) J. Electrochem. Soc. , vol.137 , pp. 1639
- Amano, H.¹ Kitoh, M.² Hiramatsu, K.³ Akasaki, I.⁴

5
- 0001229423
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki: Jpn. J. Appl. Phys. 36 (1997) L382.
- (1997) Jpn. J. Appl. Phys. , vol.36
- Takeuchi, T.¹ Sota, S.² Katsuragawa, M.³ Komori, M.⁴ Takeuchi, H.⁵ Amano, H.⁶ Akasaki, I.⁷

6
- 0033877619
- T. Takeuchi, H. Amano and I. Akasaki: Jpn. J. Appl. Phys. 39 (2000) 413.
- (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 413
- Takeuchi, T.¹ Amano, H.² Akasaki, I.³

7
- 0141606729
- C. Chen, J. Zhang, J. Yang, V. Adivarahan, S. Rai, S. Wu, H. Wang, W. Sun, M. Su, Z. Gong, E. Kuokstis, M. Gaevski and M. A. Khan: Jpn. J. Appl. Phys. 42 (2003) L818.
- (2003) Jpn. J. Appl. Phys. , vol.42
- Chen, C.¹ Zhang, J.² Yang, J.³ Adivarahan, V.⁴ Rai, S.⁵ Wu, S.⁶ Wang, H.⁷ Sun, W.⁸ Su, M.⁹ Gong, Z.¹⁰ Kuokstis, E.¹¹ Gaevski, M.¹² Khan, M.A.¹³

8
- 7544231713
- A. Chakraborty, H. Xing, M. D. Craven, S. Keller, T. Mates, J. S. Speck, S. P. DenBaars and U. K. Mishrab: J. Appl. Phys. 96 (2004) 4494.
- (2004) J. Appl. Phys. , vol.96 , pp. 4494
- Chakraborty, A.¹ Xing, H.² Craven, M.D.³ Keller, S.⁴ Mates, T.⁵ Speck, J.S.⁶ DenBaars, S.P.⁷ Mishrab, U.K.⁸

9
- 31844448034
- Japan Society of Applied Physics and Related Societies, 2a-W-2
- A. Honshio, Y. Miyake, H. Kasugai, T. Kawashima, K. Iida, M. Tsuda, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki: Ext. Abstr. (65th Autumn Meeting, 2004); Japan Society of Applied Physics and Related Societies, 2a-W-2.
- Ext. Abstr. (65th Autumn Meeting, 2004)
- Honshio, A.¹ Miyake, Y.² Kasugai, H.³ Kawashima, T.⁴ Iida, K.⁵ Tsuda, M.⁶ Iwaya, M.⁷ Kamiyama, S.⁸ Amano, H.⁹ Akasaki, I.¹⁰

10
- 0004237593
- Cambridge University Press, Cambridge, U.K.
- E. F. Schubert: Doping in III-V Semiconductors (Cambridge University Press, Cambridge, U.K., 1993) p. 130.
- (1993) Doping in III-V Semiconductors , pp. 130
- Schubert, E.F.¹

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