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Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

Improved semipolar (11 22) GaN quality using asymmetric lateral epitaxy

(4) De Mierry, P a Kriouche, N a Nemoz, M a Nataf, G a

a CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; CROSS-SECTIONAL SCANNING ELECTRON MICROSCOPIES; EPITAXIAL LATERAL OVERGROWTH; FAST GROWTH RATE; GAN FILM; GAN TEMPLATE; GROWTH ANISOTROPY; GROWTH CONDITIONS; IN-PLANE DIRECTION; LATERAL EPITAXY; LOW EMISSION; PHOTOLUMINESCENCE SPECTRUM; SEMIPOLAR; THREADING DISLOCATION; X-RAY DIFFRACTION MEASUREMENTS;

DEFECT DENSITY; DISLOCATIONS (CRYSTALS); EMISSION SPECTROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS;

SEMICONDUCTING GALLIUM;

EID: 67049172423 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3134489 Document Type: Article

Times cited : (50)

References (11)

1
- 33846793001
- 1041-1135,. 10.1109/LPT.2005.860045
- J. Piprek, R. Farrell, S. DenBaars, and S. Nakamura, IEEE Photon. Technol. Lett. 1041-1135 18, 7 (2006). 10.1109/LPT.2005.860045
- (2006) IEEE Photon. Technol. Lett. , vol.18 , pp. 7
- Piprek, J.¹ Farrell, R.² Denbaars, S.³ Nakamura, S.⁴

2
- 67049086599
- 10.1143/JJAP.48.031002
- P. De Mierry, T. Gühne, M. Nemoz, S. Chenot, E. Beraudo, and G. Nataf, Jpn. J. Appl. Phys. 48, 031002 (2009). 10.1143/JJAP.48.031002
- (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 031002
- De Mierry, P.¹ Gühne, T.² Nemoz, M.³ Chenot, S.⁴ Beraudo, E.⁵ Nataf, G.⁶

3
- 67049168726
- J. Cryst. Growth (in press).
- M. A. Moram, C. F. Johnston, M. J. Kappers, and C. J. Humphreys, " Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers.," J. Cryst. Growth (in press).
- Defect Reduction in Nonpolar and Semipolar GaN Using Scandium Nitride Interlayers
- Moram, M.A.¹ Johnston, C.F.² Kappers, M.J.³ Humphreys, C.J.⁴

4
- 33746833562
- 0021-8979,. 10.1063/1.2218385
- A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, J. Appl. Phys. 0021-8979 100, 023522 (2006). 10.1063/1.2218385
- (2006) J. Appl. Phys. , vol.100 , pp. 023522
- Romanov, A.E.¹ Baker, T.J.² Nakamura, S.³ Speck, J.S.⁴

5
- 32044473082
- 0021-4922,. 10.1143/JJAP.45.L154
- T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 0021-4922 45, L154 (2006). 10.1143/JJAP.45.L154
- (2006) Jpn. J. Appl. Phys., Part 2 , vol.45 , pp. 154
- Baker, T.J.¹ Haskell, B.A.² Wu, F.³ Speck, J.S.⁴ Nakamura, S.⁵

6
- 60349124797
- 1882-0778,. 10.1143/APEX.2.021002
- H. Asamizu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 1882-0778 2, 021002 (2009). 10.1143/APEX.2.021002
- (2009) Appl. Phys. Express , vol.2 , pp. 021002
- Asamizu, H.¹ Saito, M.² Fujito, K.³ Speck, J.S.⁴ Denbaars, S.P.⁵ Nakamura, S.⁶

7
- 2542503617
- 0034-4885,. 10.1088/0034-4885/67/5/R02
- P. Gibart, Rep. Prog. Phys. 0034-4885 67, 667 (2004). 10.1088/0034-4885/67/5/R02
- (2004) Rep. Prog. Phys. , vol.67 , pp. 667
- Gibart, P.¹

8
- 33846449468
- 0031-8965,. 10.1002/pssa.200673585
- Z. Bougrioua, M. Laügt, P. Venńgùs, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, and M. Leroux, Phys. Status Solidi A 0031-8965 204, 282 (2007). 10.1002/pssa.200673585
- (2007) Phys. Status Solidi A , vol.204 , pp. 282
- Bougrioua, Z.¹ Laügt, M.² Venńgùs, P.³ Cestier, I.⁴ Gühne, T.⁵ Frayssinet, E.⁶ Gibart, P.⁷ Leroux, M.⁸

9
- 34547838336
- 0021-4922,. 10.1143/JJAP.46.4089
- P. Venńgùs, Z. Bougrioua, and T. Gühne, Jpn. J. Appl. Phys., Part 1 0021-4922 46, 4089 (2007). 10.1143/JJAP.46.4089
- (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , pp. 4089
- Venńgùs, P.¹ Bougrioua, Z.² Gühne, T.³

10
- 36049015806
- 0921-4526,. 10.1016/j.physb.2007.08.174
- J. L. Hollander, M. J. Kappers, and C. J. Humphreys, Physica B 0921-4526 401, 307 (2007). 10.1016/j.physb.2007.08.174
- (2007) Physica B , vol.401 , pp. 307
- Hollander, J.L.¹ Kappers, M.J.² Humphreys, C.J.³

11
- 19744382873
- 0003-6951,. 10.1063/1.1852085
- R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Kahn, Appl. Phys. Lett. 0003-6951 86, 021908 (2005). 10.1063/1.1852085
- (2005) Appl. Phys. Lett. , vol.86 , pp. 021908
- Liu, R.¹ Bell, A.² Ponce, F.A.³ Chen, C.Q.⁴ Yang, J.W.⁵ Kahn, M.A.⁶

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