Understanding x-ray diffraction of nonpolar gallium nitride films

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Moram, M A ^a   Johnston, C F ^a   Hollander, J L ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; BASAL PLANE STACKING FAULTS; COHERENCE LENGTHS; DOMINANT FACTOR; GALLIUM NITRIDE FILMS; HETEROEPITAXIAL; IN-PLANE; M-PLANE; MICRO-STRAIN; NON-POLAR; ROTATIONAL ANISOTROPY; STRUCTURAL IMPERFECTIONS; STRUCTURAL QUALITIES; SURFACE ROUGHNESS EFFECTS; WAFER CURVATURE; XRD;

DEFECT DENSITY; DEFECTS; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; QUALITY CONTROL; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; STACKING FAULTS; SURFACE DEFECTS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

X RAY DIFFRACTION;

EID: 67649560592     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3129307     Document Type: Article

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