Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3295-3299

  Johnston, C F ^a   Kappers, M J ^a   Moram, M A ^a   Hollander, J L ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Defects; B1. Nitrides; B2. Semi conducting III V materials

Indexed keywords

2D GROWTH; A-PLANE GAN; A1. DEFECTS; B1. NITRIDES; B2. SEMI-CONDUCTING III-V MATERIALS; DEFECT REDUCTION; DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; GAN LAYERS; HETEROEPITAXIAL; IN-SITU TECHNIQUES; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; NON-POLAR; ORDERS OF MAGNITUDE; PLANE SAPPHIRE; SEED LAYER; SURFACE COVERAGES; TEM;

COMPOSITE FILMS; CORUNDUM; DEFECTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON NITRIDE; SINGLE CRYSTALS; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL;

DEFECT DENSITY;

EID: 66049088692     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.044     Document Type: Article

References (21)

1. Waltereit P., Brandt O., Trampert A., Grahn H.T., Menniger J., Ramsteiner M., Reiche M., and Ploog K.H. Nature (London) 406 (2000) 865-868
2. Johnston C.F., Kappers M.J., Barnard J.S., and Humphreys C.J. Phys. Status Solidi (c) (Proceedings of ICNS-7) 5 (2008) 1786-1788
3. Vennéguès P., Mathal F., and Bougrioua Z. Phys. Status Solidi (c) 3 (2006) 1658-1661
4. Chakraborty A., and Masui H. Jpn. J. Appl. Phys., Part 1 45 (2006) 739-741
5. Haskell B., Wu F., Craven M.D., Matsuda S., Fini P., Fujii T., Fujito K., DenBaars S.P., Speck J.S., and Nakamura S. Appl. Phys. Lett. 83 (2003) 1-3
6. Gühne T., Bougrioua Z., Vennéguès P., Leroux M., and Albrecht M. J. Appl. Phys. 101 (2007) 113101
7. Paskov P.P., Schifano R., Monemar B., Paskova T., Figge S., and Hommel D. J. Appl. Phys. 98 (2005) 093519
8. Rebane Y.T., Shreter Y.G., and Albrecht M. Phys. Status Solidi (a) 164 (1997) 141-144
9. Haffouz S., Lahrèche H., Vennéguès P., Beaumont B., Omnès F., and Gibart P. Appl. Phys. Lett. 73 (1998) 1278-1280
10. Moram M.A., Kappers M.J., Barber Z.H., and Humphreys C.J. J. Cryst. Growth 298 (2007) 268-271
11. Böttcher T., Einfeldt S., Figge S., Chierchia R., Heinke H., Hommel D., and Speck J.S. Appl. Phys. Lett. 78 (2001) 1976-1978
12. Datta R., Kappers M.J., Vickers M.E., Barnard J.S., and Humphreys C.J. Superlatt. Micro. 36 (2004) 393
13. Johnston C.F., Kappers M.J., and Humphreys C.J. J. Appl. Phys. 105 7 (2009) 073102
14. Lahrèche H., Vennéguès P., Beaumont B., and Gibart P. J. Cryst. Growth 205 (1999) 245-252
15. Tanaka S., Takeuchi M., and Aoyagi Y. Jpn. J. Appl. Phys. 39 (2000) L831-L834
16. Keller S., Parish G., Speck J.S., DenBaars S.P., and Mishra U.K. Appl. Phys. Lett. 77 (2000) 2665-2667
17. Böttcher T., Dennemarck J., Kröger R., Figge S., and Hommel D. Phys. Status Solidi (c) (2003) 2039-2042
18. Kappers M.J., Datta R., Oliver R.A., Rayment F.D.G., Vickers M.E., and Humphreys C.J. J. Cryst. Growth 300 (2007) 70-74
19. Moram M.A., Zhang Y., Kappers M.J., Barber Z.H., and Humphreys C.J. Appl. Phys. Lett. 91 (2007) 152101
20. P. Stadelmann, Java Electron Microscopy Suite (JEMS) 〈http://cimewww.epfl.ch/people/stadelmann/jemsWebSite/jems.html〉.
21. Johnston C.F., Moram M.A., Kappers M.J., and Humphreys C.J. Appl. Phys. Lett. 94 (2009) 161109