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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 413-416

Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells

(3) Takeuchi, Tetsuya a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

Crystal orientation; GaInN; GaN; Piezoelectric field; Transition probability

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; NITRIDES; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

GALLIUM INDIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0033877619 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.413 Document Type: Article

Times cited : (553)

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