M -plane GaN grown on m -sapphire by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Armitage, R ^a   Hirayama, H ^b  

^a PANASONIC CORPORATION   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SAPPHIRE;

GAN EPILAYERS; SUBSTRATE NITRIDATION;

GALLIUM NITRIDE;

EID: 40549134973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2894509     Document Type: Article

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