GaInN quantum wells grown on facets of selectively grown GaN stripes

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Neubert, Barbara ^a   Brückner, Peter ^a,d   Habel, Frank ^a   Scholz, Ferdinand ^a   Riemann, Till ^b   Christen, Jürgen ^b   Beer, Martin ^c   Zweck, Joseph ^c  

^a UNIVERSITY OF ULM   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c UNIVERSITY OF REGENSBURG   (Germany)

^d FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS;

INTERFACET MIGRATION; PIEZOELECTRIC FIELDS (PF); TRAPEZOIDAL CROSS SECTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 27344458961     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2126798     Document Type: Article

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