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Journal of Crystal Growth

Volumn 312, Issue 19, 2010, Pages 2625-2630

Stacking faults blocking process in (1 1 -2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

(5) Kriouche, N a Venengues P a Nemoz, M a Nataf, G a De Mierry, P a

a CNRS (France)

Author keywords

A1 .Basal stacking faults; A3. Epitaxial lateral overgrowth; A3. MOVPE; B2. Semipolar GaN

Indexed keywords

BAND-EDGE EMISSIONS; BASAL STACKING FAULTS; BLOCKING PROCESS; CRYSTAL SEEDS; CRYSTALLINE QUALITY; EPITAXIAL LATERAL OVERGROWTH; GAN FILM; GAN GROWTH; GROWTH ANISOTROPY; GROWTH CONDITIONS; HIGH INTENSITY; LATERAL EPITAXY; LOW TEMPERATURE PHOTOLUMINESCENCE; MOVPE; SEMIPOLAR;

EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

STACKING FAULTS;

EID: 77956191579 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.05.038 Document Type: Article

Times cited : (46)

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