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Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1190-1193

Defect reduction in non-polar (112̄0) GaN grown on (11̄02) sapphire

(5) Johnston, Carol F a Kappers, Menno J a Moram, Michelle A a Hollander, Jonathan L a Humphreys, Colin J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

2D GROWTH; A-PLANE GAN; AS-GROWN; BASAL PLANE STACKING FAULTS; DEFECT REDUCTION; DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; HETEROEPITAXIAL; MOVPE; NON-POLAR; ORDERS OF MAGNITUDE; PLANE SAPPHIRE; TEM; WAFER SCALE;

COMPOSITE FILMS; CORUNDUM; DEFECTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON NITRIDE; SINGLE CRYSTALS;

DEFECT DENSITY;

EID: 67650000200 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200880788 Document Type: Article

Times cited : (20)

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