Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1937-1941

  Donskov, A A ^a   D'Yakonov, L I ^a   Govorkov, A V ^a   Kozlova, Y P ^a   Malakhov, S S ^a   Markov, A V ^a   Mezhennyi, M V ^a   Pavlov, V F ^a   Polyakov, A Y ^a   Smirnov, N B ^a   Yugova, T G ^a   Pearton, S J ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGES; CRYSTAL ROCKING; CRYSTALLINE QUALITIES; DEFECT BANDS; DISLOCATION DENSITIES; GAN FILMS; HYDRIDE VAPOR PHASE EPITAXIES; NONPOLAR; ORDERS OF MAGNITUDES; RESIDUAL DONORS;

CORUNDUM; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; STACKING FAULTS; THICK FILMS; THIN FILMS; VAPOR PHASE EPITAXY; VAPORS;

DEFECT DENSITY;

EID: 57249086399     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3021367     Document Type: Article

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