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Volumn 327, Issue 1, 2011, Pages 6-12

Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy

(6) Arroyo Rojas Dasilva, Y a Zhu, T a Martin, D a Grandjean, N a Jahn, U b Stadelmann, P a

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

A1. Defects; A1. Dislocations; A1. Transmission electron microscopy; A3. Epitaxial lateral overgrown; A3. Hydride vapor phase epitaxy

Indexed keywords

A1. DEFECTS; A1. DISLOCATIONS; A3. HYDRIDE VAPOR PHASE EPITAXY; EPITAXIAL LATERAL OVERGROWN; TRANSMISSION ELECTRON;

DEFECT DENSITY; DEFECTS; EDGE DISLOCATIONS; GALLIUM NITRIDE; HYDRIDES; LATTICE MISMATCH; SAPPHIRE; SCREWS; SEMICONDUCTING GALLIUM COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

SCREW DISLOCATIONS;

EID: 79960192088 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.05.018 Document Type: Article

Times cited : (4)

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