Photoluminescence of a-plane GaN: Comparison between MOCVD and HVPE grown layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1499-1502

  Paskov, P P ^a   Schifano, R ^a,d   Malinauskas, T ^a,e   Paskova, T ^a,b   Bergman, J P ^a   Monemar, B ^a   Figge, S ^b   Hommel, D ^b   Haskell, B A ^c   Fini, P T ^c   Speck, J S ^c   Nakamura, S ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF BREMEN   (Germany)

^c Santa Barbara   (United States)

^d UNIVERSITY OF OSLO   (Norway)

^e VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION BANDS; EMISSION PROPERTIES; RECOMBINATION DYNAMICS; STRUCTURAL DEFECTS; 71.55.EQ; 78.55.CR; 81.15.GH; 81.15.KK; DONOR-ACCEPTOR PAIRS; HYDRIDE VAPOR PHASE EPITAXY; LOW TEMPERATURE PHOTOLUMINESCENCE;

CHARGE CARRIERS; CRYSTAL IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUENCHING; STACKING FAULTS; VAPORS;

GALLIUM NITRIDE;

EID: 33746388385     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565416     Document Type: Conference Paper

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